IndiumV3, Main, Repository, bibRecord, 000147

Effects of indium concentration on the properties of In-doped ZnO films: Applications to silicon wafer solar cells

Identifieur interne : 000147 ( Main/Repository ); précédent : 000146; suivant : 000148

Effects of indium concentration on the properties of In-doped ZnO films: Applications to silicon wafer solar cells

Auteurs : RBID : Pascal:14-0090026

Descripteurs français

Pascal (Inist)
- Effet concentration, Dopage, Couche mince, Silicium, Pastille électronique, Cellule solaire, Pulvérisation haute fréquence, Dépôt physique phase vapeur, Dépôt pulvérisation, Pulvérisation cathodique, Nanopoudre, Nanoparticule, Nanomatériau, Procédé sol gel, Polycristal, Cristal hexagonal, Orientation préférentielle, Microscopie électronique balayage, Microscopie force atomique, Morphologie, Section efficace, Coupe transversale, Microstructure, Structure basaltique, Etat surface, Spectre absorption, Conductivité électrique, Jonction p n, EBIC, Caractéristique courant tension, Densité courant, Eclairement, Substrat indium, ZnO, Substrat verre, Substrat silicium, In2O3, 8460J, 8115C, 8107, 8115L.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Absorption spectrum, Atomic force microscopy, Cathodic sputtering, Columnar structure, Concentration effect, Cross section, Cross section (collision), Current density, Doping, EBIC, Electrical conductivity, Hexagonal crystals, Illumination, Microstructure, Morphology, Nanoparticle, Nanopowder, Nanostructured materials, Physical vapor deposition, Polycrystal, Preferred orientation, Radiofrequency sputtering, Scanning electron microscopy, Silicon, Sol gel process, Solar cell, Sputter deposition, Surface conditions, Thin film, Voltage current curve, Wafer, p n junction.

Abstract

In the present paper, high-quality In-doped ZnO (ZnO:In) thin films have been prepared by rf-magnetron sputtering on glass and p-type monocrystalline silicon substrates from an aerogel nanopowder target material. The nanoparticles with the [ln]/[Zn] ratio varying between 0.01 and 0.05 were synthesized by the sol-gel method and the structural properties have been analyzed. The effect of different dopant concentrations on the electrical, optical, structural and morphological properties of the films has been investigated. The obtained ZnO:In films at room temperature are polycrystalline with a hexagonal structure and a highly preferred orientation with the c-axis perpendicular to the substrate. Scanning electron microscopy and atomic force microscopy have been applied for a morphology characterization of the films' cross-section and surface. The results revealed a typical columnar structure and very smooth surface. Films with good optical transmittance, around 85%, within the visible wavelength region, and low resistivity in the range of 10^-3 Ω?cm and high mobility of 4 cm²/Vs, were produced at low substrate temperature. On the other hand, we have studied the position of the p-n junction involved in an Au/In₂O₃:SnO₂/ZnO:In(n)/c-Si(p)/Al structure by electron beam induced current. Current density-voltage characterizations in the dark and under illumination were also performed. The cell exhibits an efficiency of 6%.

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Pascal:14-0090026

Le document en format XML

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<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Université de Perpignan Via Domitia (UPVD), Laboratoire Procédés, Matériaux et Energie Solaire (PROMES-CNRS), TECNOSUD, Rambla de la thermodynamique</s1>
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<author><name sortKey="Ben Ayadi, Z" uniqKey="Ben Ayadi Z">Z. Ben Ayadi</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l'Environnement (LaPhyMNE), Université de Gabès, Faculté des Sciences de Gabès, Cité Erriadh Manara Zrig</s1>
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<date when="2014">2014</date>
<idno type="stanalyst">PASCAL 14-0090026 INIST</idno>
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<term>Cathodic sputtering</term>
<term>Columnar structure</term>
<term>Concentration effect</term>
<term>Cross section</term>
<term>Cross section (collision)</term>
<term>Current density</term>
<term>Doping</term>
<term>EBIC</term>
<term>Electrical conductivity</term>
<term>Hexagonal crystals</term>
<term>Illumination</term>
<term>Microstructure</term>
<term>Morphology</term>
<term>Nanoparticle</term>
<term>Nanopowder</term>
<term>Nanostructured materials</term>
<term>Physical vapor deposition</term>
<term>Polycrystal</term>
<term>Preferred orientation</term>
<term>Radiofrequency sputtering</term>
<term>Scanning electron microscopy</term>
<term>Silicon</term>
<term>Sol gel process</term>
<term>Solar cell</term>
<term>Sputter deposition</term>
<term>Surface conditions</term>
<term>Thin film</term>
<term>Voltage current curve</term>
<term>Wafer</term>
<term>p n junction</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Effet concentration</term>
<term>Dopage</term>
<term>Couche mince</term>
<term>Silicium</term>
<term>Pastille électronique</term>
<term>Cellule solaire</term>
<term>Pulvérisation haute fréquence</term>
<term>Dépôt physique phase vapeur</term>
<term>Dépôt pulvérisation</term>
<term>Pulvérisation cathodique</term>
<term>Nanopoudre</term>
<term>Nanoparticule</term>
<term>Nanomatériau</term>
<term>Procédé sol gel</term>
<term>Polycristal</term>
<term>Cristal hexagonal</term>
<term>Orientation préférentielle</term>
<term>Microscopie électronique balayage</term>
<term>Microscopie force atomique</term>
<term>Morphologie</term>
<term>Section efficace</term>
<term>Coupe transversale</term>
<term>Microstructure</term>
<term>Structure basaltique</term>
<term>Etat surface</term>
<term>Spectre absorption</term>
<term>Conductivité électrique</term>
<term>Jonction p n</term>
<term>EBIC</term>
<term>Caractéristique courant tension</term>
<term>Densité courant</term>
<term>Eclairement</term>
<term>Substrat indium</term>
<term>ZnO</term>
<term>Substrat verre</term>
<term>Substrat silicium</term>
<term>In2O3</term>
<term>8460J</term>
<term>8115C</term>
<term>8107</term>
<term>8115L</term>
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<front><div type="abstract" xml:lang="en">In the present paper, high-quality In-doped ZnO (ZnO:In) thin films have been prepared by rf-magnetron sputtering on glass and p-type monocrystalline silicon substrates from an aerogel nanopowder target material. The nanoparticles with the [ln]/[Zn] ratio varying between 0.01 and 0.05 were synthesized by the sol-gel method and the structural properties have been analyzed. The effect of different dopant concentrations on the electrical, optical, structural and morphological properties of the films has been investigated. The obtained ZnO:In films at room temperature are polycrystalline with a hexagonal structure and a highly preferred orientation with the c-axis perpendicular to the substrate. Scanning electron microscopy and atomic force microscopy have been applied for a morphology characterization of the films' cross-section and surface. The results revealed a typical columnar structure and very smooth surface. Films with good optical transmittance, around 85%, within the visible wavelength region, and low resistivity in the range of 10<sup>-3</sup>
 Ω?cm and high mobility of 4 cm<sup>2</sup>
/Vs, were produced at low substrate temperature. On the other hand, we have studied the position of the p-n junction involved in an Au/In<sub>2</sub>
O<sub>3</sub>
:SnO<sub>2</sub>
/ZnO:In(n)/c-Si(p)/Al structure by electron beam induced current. Current density-voltage characterizations in the dark and under illumination were also performed. The cell exhibits an efficiency of 6%.</div>
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<fC01 i1="01" l="ENG"><s0>In the present paper, high-quality In-doped ZnO (ZnO:In) thin films have been prepared by rf-magnetron sputtering on glass and p-type monocrystalline silicon substrates from an aerogel nanopowder target material. The nanoparticles with the [ln]/[Zn] ratio varying between 0.01 and 0.05 were synthesized by the sol-gel method and the structural properties have been analyzed. The effect of different dopant concentrations on the electrical, optical, structural and morphological properties of the films has been investigated. The obtained ZnO:In films at room temperature are polycrystalline with a hexagonal structure and a highly preferred orientation with the c-axis perpendicular to the substrate. Scanning electron microscopy and atomic force microscopy have been applied for a morphology characterization of the films' cross-section and surface. The results revealed a typical columnar structure and very smooth surface. Films with good optical transmittance, around 85%, within the visible wavelength region, and low resistivity in the range of 10<sup>-3</sup>
 Ω?cm and high mobility of 4 cm<sup>2</sup>
/Vs, were produced at low substrate temperature. On the other hand, we have studied the position of the p-n junction involved in an Au/In<sub>2</sub>
O<sub>3</sub>
:SnO<sub>2</sub>
/ZnO:In(n)/c-Si(p)/Al structure by electron beam induced current. Current density-voltage characterizations in the dark and under illumination were also performed. The cell exhibits an efficiency of 6%.</s0>
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<fC02 i1="05" i2="X"><s0>230</s0>
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<s5>01</s5>
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<s5>01</s5>
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<s5>01</s5>
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<s5>02</s5>
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<s5>02</s5>
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<s5>02</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<fC03 i1="04" i2="X" l="SPA"><s0>Silicio</s0>
<s2>NC</s2>
<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>10</s5>
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<fC03 i1="10" i2="X" l="ENG"><s0>Cathodic sputtering</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Pulverización catódica</s0>
<s5>10</s5>
</fC03>
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<s5>11</s5>
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<s5>11</s5>
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<s5>11</s5>
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<s5>12</s5>
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<s5>15</s5>
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<fC03 i1="15" i2="X" l="SPA"><s0>Policristal</s0>
<s5>15</s5>
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<s5>29</s5>
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<s5>29</s5>
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<s5>29</s5>
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<s5>30</s5>
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<s5>30</s5>
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<s5>31</s5>
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<s5>31</s5>
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<s5>31</s5>
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<s5>32</s5>
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<fC03 i1="19" i2="X" l="ENG"><s0>Atomic force microscopy</s0>
<s5>32</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Microscopía fuerza atómica</s0>
<s5>32</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Morphologie</s0>
<s5>33</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>Morphology</s0>
<s5>33</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Morfología</s0>
<s5>33</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>Section efficace</s0>
<s5>34</s5>
</fC03>
<fC03 i1="21" i2="X" l="ENG"><s0>Cross section (collision)</s0>
<s5>34</s5>
</fC03>
<fC03 i1="21" i2="X" l="SPA"><s0>Sección eficaz</s0>
<s5>34</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>Coupe transversale</s0>
<s5>35</s5>
</fC03>
<fC03 i1="22" i2="X" l="ENG"><s0>Cross section</s0>
<s5>35</s5>
</fC03>
<fC03 i1="22" i2="X" l="SPA"><s0>Corte transverso</s0>
<s5>35</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>Microstructure</s0>
<s5>36</s5>
</fC03>
<fC03 i1="23" i2="X" l="ENG"><s0>Microstructure</s0>
<s5>36</s5>
</fC03>
<fC03 i1="23" i2="X" l="SPA"><s0>Microestructura</s0>
<s5>36</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE"><s0>Structure basaltique</s0>
<s5>37</s5>
</fC03>
<fC03 i1="24" i2="X" l="ENG"><s0>Columnar structure</s0>
<s5>37</s5>
</fC03>
<fC03 i1="24" i2="X" l="SPA"><s0>Estructura columnar</s0>
<s5>37</s5>
</fC03>
<fC03 i1="25" i2="X" l="FRE"><s0>Etat surface</s0>
<s5>38</s5>
</fC03>
<fC03 i1="25" i2="X" l="ENG"><s0>Surface conditions</s0>
<s5>38</s5>
</fC03>
<fC03 i1="25" i2="X" l="SPA"><s0>Estado superficie</s0>
<s5>38</s5>
</fC03>
<fC03 i1="26" i2="X" l="FRE"><s0>Spectre absorption</s0>
<s5>39</s5>
</fC03>
<fC03 i1="26" i2="X" l="ENG"><s0>Absorption spectrum</s0>
<s5>39</s5>
</fC03>
<fC03 i1="26" i2="X" l="SPA"><s0>Espectro de absorción</s0>
<s5>39</s5>
</fC03>
<fC03 i1="27" i2="X" l="FRE"><s0>Conductivité électrique</s0>
<s5>40</s5>
</fC03>
<fC03 i1="27" i2="X" l="ENG"><s0>Electrical conductivity</s0>
<s5>40</s5>
</fC03>
<fC03 i1="27" i2="X" l="SPA"><s0>Conductividad eléctrica</s0>
<s5>40</s5>
</fC03>
<fC03 i1="28" i2="X" l="FRE"><s0>Jonction p n</s0>
<s5>41</s5>
</fC03>
<fC03 i1="28" i2="X" l="ENG"><s0>p n junction</s0>
<s5>41</s5>
</fC03>
<fC03 i1="28" i2="X" l="SPA"><s0>Unión p n</s0>
<s5>41</s5>
</fC03>
<fC03 i1="29" i2="3" l="FRE"><s0>EBIC</s0>
<s5>42</s5>
</fC03>
<fC03 i1="29" i2="3" l="ENG"><s0>EBIC</s0>
<s5>42</s5>
</fC03>
<fC03 i1="30" i2="X" l="FRE"><s0>Caractéristique courant tension</s0>
<s5>43</s5>
</fC03>
<fC03 i1="30" i2="X" l="ENG"><s0>Voltage current curve</s0>
<s5>43</s5>
</fC03>
<fC03 i1="30" i2="X" l="SPA"><s0>Característica corriente tensión</s0>
<s5>43</s5>
</fC03>
<fC03 i1="31" i2="X" l="FRE"><s0>Densité courant</s0>
<s5>44</s5>
</fC03>
<fC03 i1="31" i2="X" l="ENG"><s0>Current density</s0>
<s5>44</s5>
</fC03>
<fC03 i1="31" i2="X" l="SPA"><s0>Densidad corriente</s0>
<s5>44</s5>
</fC03>
<fC03 i1="32" i2="X" l="FRE"><s0>Eclairement</s0>
<s5>45</s5>
</fC03>
<fC03 i1="32" i2="X" l="ENG"><s0>Illumination</s0>
<s5>45</s5>
</fC03>
<fC03 i1="32" i2="X" l="SPA"><s0>Alumbrado</s0>
<s5>45</s5>
</fC03>
<fC03 i1="33" i2="X" l="FRE"><s0>Substrat indium</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="34" i2="X" l="FRE"><s0>ZnO</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="35" i2="X" l="FRE"><s0>Substrat verre</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="36" i2="X" l="FRE"><s0>Substrat silicium</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="37" i2="X" l="FRE"><s0>In2O3</s0>
<s4>INC</s4>
<s5>50</s5>
</fC03>
<fC03 i1="38" i2="X" l="FRE"><s0>8460J</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="39" i2="X" l="FRE"><s0>8115C</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="40" i2="X" l="FRE"><s0>8107</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="41" i2="X" l="FRE"><s0>8115L</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>118</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>TCM2012 International Symposia on Transparent Conductive Materials</s1>
<s3>Hersonissos, Crete GRC</s3>
<s4>2012-10-25</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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   |texte=   Effects of indium concentration on the properties of In-doped ZnO films: Applications to silicon wafer solar cells
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Effects of indium concentration on the properties of In-doped ZnO films: Applications to silicon wafer solar cells

Effects of indium concentration on the properties of In-doped ZnO films: Applications to silicon wafer solar cells

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